Electronics and Semiconductor Manufacturing Industry

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Inauguration of Electronics Grade B-11 Enrichment Facility by Dr. A.K. Mohanty, Chairman, Atomic Energy Commission & Secretary, Department of Atomic Energy at HWBF, Talcher on 23-10-2024​

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Posted On: 30 OCT 2024 5:19PM by PIB Delhi

Dr. A. K. Mohanty, Chairman, Atomic Energy Commission (AEC)& Secretary, Department of Atomic Energy (DAE) inaugurated Electronics Grade Boron-11 (B11) Enrichment Facility at Heavy Water Board Facilities (HWBF), Talcher on October 23, 2024. With technology demonstration of B11 enrichment to electronics grade (>99.8%) at HWBF, Talcher, now India has joined the elite club of nations who are having this technology and it is a significant step towards Atmanirbhar Bharat. Electronics grade B11 is used for production of BF3 gas which is used as p-type dopant in the manufacturing of semiconductor chips.

HWBF, Talcher, which is sub-unit of Heavy Water Board, Mumbai under the Department of Atomic Energy, Government of India, is pioneer in the field of production of various specialty materials for nuclear as well as non-nuclear applications. The unit is involvedin the production of nuclear control rod grade (> 67% IP ) and neutron detector grade(>96% IP) of Boron-10 (B10) isotopes. These B10enriched products are essential for 3-stage nuclear power programme. HWBF, Talcher also produces different organophosporous solvents used in front end and back end of nuclear fuel cycle.

Inauguration of Electronics Grade B-11 Enrichment Facility by Dr. A.K. Mohanty, Chairman, Atomic Energy Commission& Secretray, Department of Atomic Energy at HWBF, Talcher on 23-10-2024

Dr. A. K. Mohanty, Chairman, Atomic Energy Commission (AEC)& Secretary, Department of Atomic Energy

pib.gov.in

View: https://x.com/lakshmishaks/status/1851905906977706114

 

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Can AGNIT's GaN Wafers Become India's Edge In The Global Chip Market?

Founded in 2019, AGNIT Semiconductors stands out as India’s first startup focussed on developing GaN-based wafers

inc42.com

Built from the ground up with proprietary technology and supported by 15+ years of research by top IISc professors and students, AGNIT will be the first to utilise The Gallium Nitride Ecosystem Enabling Centre and Incubator’s (GEECI) infrastructure for GaN wafer and radio frequency (RF) device production.

As AGNIT is buckling up for the reliability check of its devices and plans to make about 1 Lakh devices in the next 12-24 months, it recently raised $3.5 Mn in a funding round co-led by 3one4 Capital and Zephyr Peacock, with the participation from Cognizant’s Narayanan.