On June 6th, Shanghai Jiao Tong University Wuxi Photonics Chip Research Institute (CHIPX) announced a significant moment today: On June 5th, the first 6-inch thin-film lithium niobate photonic chip wafer was launched in the first domestic photonic chip pilot production line. At the same time, it achieved large-scale production of high-performance thin-film lithium niobate modulator chips with ultra-low loss and ultra-high bandwidth, and the key technical indicators reached the international advanced level.
CHIPX's official statement indicates that this breakthrough achievement marks China's historic leap from "technology catch-up" to "industry leadership" in the field of high-end optoelectronic core devices. Relying on the pilot production platform, the research institute will join hands with partners in the industrial chain to promote the process of large-scale mass production, build a full-chain capability of "technology research and development - process verification - large-scale mass production", and further enhance the international competitiveness of independent and controllable quantum technology.
Photonic quantum chips are the core hardware carriers of photonic quantum computing. Their industrialization process will promote China's realization of independent control in the field of quantum information and is also a strategic support for seizing the commanding heights of global quantum technology competition. Previously, due to the lack of a common key process technology platform, China's photonic quantum technology faced the predicament of "difficulty in mass-producing laboratory achievements", which was a "bottleneck" problem restricting the development of the industry. However, the launch of the photonic chip pilot production line has become the key to breaking the deadlock.
In December 2022, the Wuxi Institute of Photonic Chips of Shanghai Jiao Tong University initiated the construction of China's first photonic chip pilot production line. In September 2024, the photonic chip pilot production line integrating the research and development, design, processing and application of photonic chips was officially put into use. Now, the first wafer has successfully rolled off the production line, and the pilot platform has achieved mass production.
As a high-performance optoelectronic material, thin-film lithium niobate has advantages such as ultrafast electro-optic effects, high bandwidth, and low power consumption, and shows great potential in fields such as 5G communication and quantum computing. However, due to the high brittleness of thin-film lithium niobate materials, the preparation of large-sized thin-film lithium niobate wafers has always been regarded as a challenge by the industry, especially in the mass production process, which faces three major problems: controlling the nanoscale processing accuracy, ensuring the uniformity of thin-film deposition, and regulating the consistency of etching rate.
Based on its independently built first domestic photonic chip pilot line, the CHIPX process team has introduced over 110 sets of top international CMOS process equipment, covering the entire closed-loop process of thin-film lithium niobate wafers from photolithography, thin film deposition, etching, wet process, cutting, measurement to packaging. By innovatively developing the collaborative adaptation technology of chip design, process solutions and equipment systems, we have successfully broken through the entire manufacturing process from photolithography patterning, precision etching, thin film deposition to packaging and testing, achieving a breakthrough in the integrated process of wafer-level photonic chips.
Relying on the advanced nano-scale processing equipment and rapid process iteration capabilities of the pilot platform, the process team, through extensive process verification and optimization, systematically solved the key technical bottlenecks of wafer-level photonic chip integration by combining deep ultraviolet (DUV) lithography and thin film etching processes: achieving 110nm high-precision waveguide etching on 6-inch lithium niobate wafers; The cross-scale integration of highly uniform, nanoscale waveguides and complex high-performance electrode structures was accomplished through step-by-step (i-line) lithography, reaching the top-level manufacturing process level.
Meanwhile, through the collaborative design innovation of materials and devices, the process team has achieved a leapfrog breakthrough in performance while taking into account high integration, and all key indicators are leading comprehensively:
The modulation bandwidth has exceeded 110GHz, breaking through the bandwidth bottleneck of international high-speed optical interconnection
The insertion loss is less than 3.5dB and the waveguide loss is less than 0.2dB/cm, significantly improving the optical transmission efficiency
The modulation efficiency is less than 1.9 V · cm, and the electro-optical conversion efficiency has been significantly optimized
Relying on the pilot production line platform and the mass production capacity of 12,000 wafers per year, the research institute will provide industrial partners with "low-cost", "rapid iteration" and "large-scale mass production" solutions.
IT Home learned from CHIPX's announcement that in the third quarter of this year, the research institute will release the PDK process design package. The core process parameters and device models of the high-performance thin-film lithium niobate modulator chip have been fully incorporated and are now open for sharing. This version of PDK not only integrates basic component models such as passive couplers, beam splitters, waveguide arrays, active thermal phase shifters, and electro-optic modulators, but also covers a multi-physics field collaborative simulation module, establishing a standardized photonic chip design system.